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DSS 2x61-0045A Power Schottky Rectifier IFAV = 2x60 A VRRM = 45 V VF = 0.66 V VRSM V 45 VRRM V 45 Type miniBLOC, SOT-227 B DSS 2x61-0045A Symbol IFRMS IFAVM IFAVM IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot VISOL Md Weight Conditions Maximum Ratings 100 60 120 800 57 2 1000 -40...+150 150 -40...+150 A A A A mJ A V/ms C C C W V~ TC = 105C; rectangular, d = 0.5 TC = 105C; rectangular, d = 0.5; per device TVJ = 45C; tp = 10 ms (50 Hz), sine IAS = 20 A; L = 180 H; TVJ = 25C; non repetitive VA =1.5 * VRRM typ.; f=10 kHz; repetitive Features * International standard package miniBLOC * Isolation voltage 2500 V~ * UL registered E 72873 * 2 independent Schottky diodes in 1 package * Very low VF * Extremely low switching losses * Low IRM-values Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters TC = 25C 50/60 Hz, RMS IISOL 1 mA mounting torque (M4) terminal connection torque (M4) typical 150 2500 1.1-1.5/9-13 1.1-1.5/9-13 30 Nm/lb.in. Nm/lb.in. g Symbol IR VF Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 60 A; IF = 60 A; IF = 120 A; TVJ = 125C TVJ = 25C TVJ = 125C Characteristic Values typ. max. 2 20 0.66 0.74 0.86 0.8 0.1 mA mA V V V K/W K/W Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses Dimensions see outlines.pdf RthJC RthCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 007 (c) 2000 IXYS All rights reserved 1-2 DSS 2x61-0045A 100 A IF IR 100 mA 10000 pF 10 TVJ=150C CT 1 125C 10 0.1 TVJ = 150C 125C 25C 75C 100C 1000 0.01 50C 25C TVJ= 25C 1 0.0 0.001 0.2 0.4 0.6 VF 0.8 V 1.0 0 10 20 30 40 V 50 VR 100 0 10 20 30 VR 40 V Fig. 1 Maximum forward voltage drop characteristics 120 A 100 IF(AV) 80 60 40 Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 80 W 70 60 P(AV) 50 40 d= DC 0.5 0.33 0.25 0.17 0.08 Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 10000 A IFSM 1000 d=0.5 DC 30 20 20 0 0 40 80 TC 120 C 160 10 0 0 10 20 30 40 50 60 70 80 90 A IF(AV) 100 10 100 1000 s 10000 tP Fig. 4 Average forward current IF(AV) versus case temperature TC 1 K/W ZthJC D=0.5 0.33 0.25 0.17 Fig. 5 Forward power loss characteristics 0.08 0.1 Single Pulse (Thermal Resistance) 0.05 0.001 DSS2x061-0045A 0.01 0.1 1s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 007 (c) 2000 IXYS All rights reserved 2-2 |
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