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 DSS 2x61-0045A
Power Schottky Rectifier
IFAV = 2x60 A VRRM = 45 V VF = 0.66 V
VRSM V 45
VRRM V 45
Type
miniBLOC, SOT-227 B
DSS 2x61-0045A
Symbol IFRMS IFAVM IFAVM IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot VISOL Md Weight
Conditions
Maximum Ratings 100 60 120 800 57 2 1000 -40...+150 150 -40...+150 A A A A mJ A V/ms C C C W V~
TC = 105C; rectangular, d = 0.5 TC = 105C; rectangular, d = 0.5; per device TVJ = 45C; tp = 10 ms (50 Hz), sine IAS = 20 A; L = 180 H; TVJ = 25C; non repetitive VA =1.5 * VRRM typ.; f=10 kHz; repetitive
Features * International standard package miniBLOC * Isolation voltage 2500 V~ * UL registered E 72873 * 2 independent Schottky diodes in 1 package * Very low VF * Extremely low switching losses * Low IRM-values Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters
TC = 25C 50/60 Hz, RMS IISOL 1 mA mounting torque (M4) terminal connection torque (M4) typical
150 2500
1.1-1.5/9-13 1.1-1.5/9-13 30
Nm/lb.in. Nm/lb.in. g
Symbol IR VF
Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 60 A; IF = 60 A; IF = 120 A; TVJ = 125C TVJ = 25C TVJ = 125C
Characteristic Values typ. max. 2 20 0.66 0.74 0.86 0.8 0.1 mA mA V V V K/W K/W
Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses
Dimensions see outlines.pdf
RthJC RthCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions.
007
(c) 2000 IXYS All rights reserved
1-2
DSS 2x61-0045A
100 A IF IR
100 mA
10000 pF
10
TVJ=150C
CT
1 125C 10 0.1
TVJ = 150C 125C 25C 75C 100C
1000
0.01 50C
25C TVJ= 25C
1 0.0
0.001 0.2 0.4 0.6 VF 0.8 V 1.0 0 10 20 30 40 V 50 VR
100 0 10 20 30 VR 40 V
Fig. 1 Maximum forward voltage drop characteristics
120 A 100 IF(AV) 80 60 40
Fig. 2 Typ. value of reverse current IR versus reverse voltage VR
80 W 70 60 P(AV) 50 40 d= DC 0.5 0.33 0.25 0.17 0.08
Fig. 3 Typ. junction capacitance CT versus reverse voltage VR
10000
A IFSM
1000
d=0.5
DC 30 20
20 0 0 40 80 TC 120 C 160
10 0 0 10 20 30 40 50 60 70 80 90 A IF(AV) 100 10
100
1000 s 10000 tP
Fig. 4 Average forward current IF(AV) versus case temperature TC
1 K/W ZthJC
D=0.5 0.33 0.25 0.17
Fig. 5 Forward power loss characteristics
0.08
0.1
Single Pulse (Thermal Resistance)
0.05 0.001
DSS2x061-0045A
0.01
0.1
1s
10 t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
007
(c) 2000 IXYS All rights reserved
2-2


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